10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure

We have developed a 1310-nm uncooled electroabsorption modulator integrated light source (EML) with an AlGaInAs multiple quantum well (MQW) active/absorption stripe, which was simultaneously grown using the narrow-stripe selective MOVPE technique and was buried with an Fe-doped InP. The Al-content MQW oxidation was effectively inhibited by using the same technique. An experiment-based evaluation of the device's performance revealed that by only changing the modulation bias voltage linearly with temperature, it was possible to achieve 10-Gb/s penalty-free operation at up to 85/spl deg/C over a 23-km single-mode fiber.