Vertical-cavity surface-emitting lasers with monolithically integrated horizontal waveguides

We present the development of novel 980-nm Ga/sub 0.8/In/sub 0.2/As-GaAs vertical-cavity surface-emitting lasers (VCSELs) with an internal waveguide structure. The monolithic integration of a horizontal waveguide in the top distributed Bragg reflector (DBR) creates the potential for achieving VCSEL-...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2005-01, Vol.17 (1), p.10-12
Hauptverfasser:	Lin, H.C., Louderback, D.A., Pickrell, G.W., Fish, M.A., Hindi, J.J., Simpson, M.C., Guilfoyle, P.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Apertures Bragg reflectors Distributed Bragg reflectors Emittance Horizontal Monolithic integrated circuits Monolithic integration Noise levels Optical propagation Photonic integrated circuits Photonics single mode Surface emitting lasers Surface waves Vertical cavity surface emission lasers Vertical cavity surface emitting lasers vertical-cavity surface-emitting laser (VCSEL) Wave propagation waveguide Waveguide components Waveguide lasers Waveguides
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We present the development of novel 980-nm Ga/sub 0.8/In/sub 0.2/As-GaAs vertical-cavity surface-emitting lasers (VCSELs) with an internal waveguide structure. The monolithic integration of a horizontal waveguide in the top distributed Bragg reflector (DBR) creates the potential for achieving VCSEL-based photonic integrated circuits. An AlGaAs-GaAs-AlGaAs waveguide designed for horizontal propagation of light was monolithically integrated as part of the upper GaAs-AlGaAs DBR of the device. VCSELs with 9-μm apertures emitted 3-mW single-mode power with both longitudinal and lateral mode suppression ratio of 40 dB under room-temperature continuous-wave operation.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2004.837483