A surface-normal coupled-quantum-well modulator at 1.55 μm

We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about t...

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Veröffentlicht in:	IEEE photonics technology letters 2004-09, Vol.16 (9), p.2036-2038
Hauptverfasser:	Stievater, T.H., Rabinovich, W.S., Goetz, P.G., Mahon, R., Binari, S.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chirp modulation Devices Electric potential Heating Indium gallium arsenide Joining Low voltage Modulation Modulators Optical arrays Optical coupling Optical modulation Optical surface waves Photonics Quantum well devices Quantum wells Stark effect Voltage
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