A surface-normal coupled-quantum-well modulator at 1.55 μm

A surface-normal coupled-quantum-well modulator at 1.55 μm

We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about t...

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Veröffentlicht in:IEEE photonics technology letters 2004-09, Vol.16 (9), p.2036-2038
Hauptverfasser: Stievater, T.H., Rabinovich, W.S., Goetz, P.G., Mahon, R., Binari, S.C.
Format: Artikel
Sprache:eng
Schlagworte:
Chirp modulation
Devices
Electric potential
Heating
Indium gallium arsenide
Joining
Low voltage
Modulation
Modulators
Optical arrays
Optical coupling
Optical modulation
Optical surface waves
Photonics
Quantum well devices
Quantum wells
Stark effect
Voltage
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Beschreibung
Zusammenfassung:We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.831981