A surface-normal coupled-quantum-well modulator at 1.55 μm
We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about t...
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| Veröffentlicht in: | IEEE photonics technology letters 2004-09, Vol.16 (9), p.2036-2038 |
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| container_title | IEEE photonics technology letters |
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| creator | Stievater, T.H. Rabinovich, W.S. Goetz, P.G. Mahon, R. Binari, S.C. |
| description | We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio. |
| doi_str_mv | 10.1109/LPT.2004.831981 |
| format | Article |
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The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio.</description><subject>Chirp modulation</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Heating</subject><subject>Indium gallium arsenide</subject><subject>Joining</subject><subject>Low voltage</subject><subject>Modulation</subject><subject>Modulators</subject><subject>Optical arrays</subject><subject>Optical coupling</subject><subject>Optical modulation</subject><subject>Optical surface waves</subject><subject>Photonics</subject><subject>Quantum well devices</subject><subject>Quantum wells</subject><subject>Stark effect</subject><subject>Voltage</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkE1LAzEQhoMoWKtnD1725mm3M8lmm-CpFL9gQQ_1HGI2gcpu0yYbxP_mb_A3mbKCzGHew_MOw0PINUKFCHLRvm4qClBXgqEUeEJmKGssAZf1ac6QMyLj5-Qixg8ArDmrZ-RuVcQUnDa23Pkw6L4wPu1725WHpHdjGspP2_fF4LvU69GHQo8FVpwXP9_DJTlzuo_26m_PydvD_Wb9VLYvj8_rVVsaKnEsHYXOMdpJrU3TWGcMNkgFdnkEXXJpO-TMNEzCOzSSWyEFOGYk1iCN5mxObqe7--APycZRDdto8lt6Z32KSsiGIlAGmVxMpAk-xmCd2oftoMOXQlBHSypbUkdLarKUGzdTY2ut_acZ5ZTW7Bc8XmHw</recordid><startdate>20040901</startdate><enddate>20040901</enddate><creator>Stievater, T.H.</creator><creator>Rabinovich, W.S.</creator><creator>Goetz, P.G.</creator><creator>Mahon, R.</creator><creator>Binari, S.C.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20040901</creationdate><title>A surface-normal coupled-quantum-well modulator at 1.55 μm</title><author>Stievater, T.H. ; Rabinovich, W.S. ; Goetz, P.G. ; Mahon, R. ; Binari, S.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-f20df32d9aac66efcc161281d1d182759ed153c6390b0695e8980f3c91409ca53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Chirp modulation</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Heating</topic><topic>Indium gallium arsenide</topic><topic>Joining</topic><topic>Low voltage</topic><topic>Modulation</topic><topic>Modulators</topic><topic>Optical arrays</topic><topic>Optical coupling</topic><topic>Optical modulation</topic><topic>Optical surface waves</topic><topic>Photonics</topic><topic>Quantum well devices</topic><topic>Quantum wells</topic><topic>Stark effect</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Stievater, T.H.</creatorcontrib><creatorcontrib>Rabinovich, W.S.</creatorcontrib><creatorcontrib>Goetz, P.G.</creatorcontrib><creatorcontrib>Mahon, R.</creatorcontrib><creatorcontrib>Binari, S.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Stievater, T.H.</au><au>Rabinovich, W.S.</au><au>Goetz, P.G.</au><au>Mahon, R.</au><au>Binari, S.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A surface-normal coupled-quantum-well modulator at 1.55 μm</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2004-09-01</date><risdate>2004</risdate><volume>16</volume><issue>9</issue><spage>2036</spage><epage>2038</epage><pages>2036-2038</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. 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| ispartof | IEEE photonics technology letters, 2004-09, Vol.16 (9), p.2036-2038 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Chirp modulation Devices Electric potential Heating Indium gallium arsenide Joining Low voltage Modulation Modulators Optical arrays Optical coupling Optical modulation Optical surface waves Photonics Quantum well devices Quantum wells Stark effect Voltage |
| title | A surface-normal coupled-quantum-well modulator at 1.55 μm |
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