Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors
A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).
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| Veröffentlicht in: | IEEE photonics technology letters 2004-03, Vol.16 (3), p.867-869 |
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| container_end_page | 869 |
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| container_issue | 3 |
| container_start_page | 867 |
| container_title | IEEE photonics technology letters |
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| creator | Stiff-Roberts, A.D. Su, X.H. Chakrabarti, S. Bhattacharya, P. |
| description | A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V). |
| doi_str_mv | 10.1109/LPT.2004.823690 |
| format | Article |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2004-03, Vol.16 (3), p.867-869 |
| issn | 1041-1135 1941-0174 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Current measurement Dark current Electrons Emission Infrared Infrared detectors Mathematical models Photodetectors Quantum dots Temperature distribution Thermionic emission Tunneling US Department of Transportation |
| title | Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors |
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