Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors

Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors

A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).

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Veröffentlicht in:IEEE photonics technology letters 2004-03, Vol.16 (3), p.867-869
Hauptverfasser: Stiff-Roberts, A.D., Su, X.H., Chakrabarti, S., Bhattacharya, P.
Format: Artikel
Sprache:eng
Schlagworte:
Current measurement
Dark current
Electrons
Emission
Infrared
Infrared detectors
Mathematical models
Photodetectors
Quantum dots
Temperature distribution
Thermionic emission
Tunneling
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Zusammenfassung:A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.823690