Ultralow-Power W -Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS
This letter presents a power consumption reduction aspect for a 100-GHz low-noise amplifier (LNA). Two designs implemented in 0.13- \mu m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology demonstrate state-of-the-art performance, whereas P_{\mathrm{DC}} is reduced from 23.5...
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| Veröffentlicht in: | IEEE microwave and wireless technology letters (Print) 2023-08, Vol.33 (8), p.1-4 |
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| creator | Smirnova, Kateryna Bohn, Christian Kaynak, Mehmet Ulusoy, Ahmet Cagri |
| description | This letter presents a power consumption reduction aspect for a 100-GHz low-noise amplifier (LNA). Two designs implemented in 0.13- \mu m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology demonstrate state-of-the-art performance, whereas P_{\mathrm{DC}} is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 and 16 dB and a noise figure (NF) of 4 and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is - 24.5 and - 26.5 dBm, respectively. The occupied integrated circuit (IC) area in both cases is 0.018 and 0.014 mm ^2 excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest. |
| doi_str_mv | 10.1109/LMWT.2023.3279574 |
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Two designs implemented in 0.13-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology demonstrate state-of-the-art performance, whereas <inline-formula> <tex-math notation="LaTeX">P_{\mathrm{DC}}</tex-math> </inline-formula> is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 and 16 dB and a noise figure (NF) of 4 and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>24.5 and <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>26.5 dBm, respectively. The occupied integrated circuit (IC) area in both cases is 0.018 and 0.014 mm<inline-formula> <tex-math notation="LaTeX">^2</tex-math> </inline-formula> excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.]]></description><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWT.2023.3279574</identifier><identifier>CODEN: IMWTAZ</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject><inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> W</tex-math> </inline-formula>-band ; Amplifier design ; Amplifiers ; BiCMOS integrated circuits ; CMOS ; Frequency measurement ; Frequency ranges ; Integrated circuits ; Low-noise amplifier (LNA) ; Low-noise amplifiers ; noise figure (NF) ; Noise levels ; Noise measurement ; Silicon germanides ; Silicon germanium ; Wireless communication</subject><ispartof>IEEE microwave and wireless technology letters (Print), 2023-08, Vol.33 (8), p.1-4</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c246t-70aa76fe4cb8bc337870700c2a0792e46097da3195ab5e53b0d132289ebad0083</cites><orcidid>0000-0003-3583-8252 ; 0000-0002-1572-7208 ; 0000-0001-5718-2827</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10144625$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10144625$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Smirnova, Kateryna</creatorcontrib><creatorcontrib>Bohn, Christian</creatorcontrib><creatorcontrib>Kaynak, Mehmet</creatorcontrib><creatorcontrib>Ulusoy, Ahmet Cagri</creatorcontrib><title>Ultralow-Power W -Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS</title><title>IEEE microwave and wireless technology letters (Print)</title><addtitle>LMWT</addtitle><description><![CDATA[This letter presents a power consumption reduction aspect for a 100-GHz low-noise amplifier (LNA). Two designs implemented in 0.13-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology demonstrate state-of-the-art performance, whereas <inline-formula> <tex-math notation="LaTeX">P_{\mathrm{DC}}</tex-math> </inline-formula> is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 and 16 dB and a noise figure (NF) of 4 and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>24.5 and <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>26.5 dBm, respectively. The occupied integrated circuit (IC) area in both cases is 0.018 and 0.014 mm<inline-formula> <tex-math notation="LaTeX">^2</tex-math> </inline-formula> excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.]]></description><subject><inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> W</tex-math> </inline-formula>-band</subject><subject>Amplifier design</subject><subject>Amplifiers</subject><subject>BiCMOS integrated circuits</subject><subject>CMOS</subject><subject>Frequency measurement</subject><subject>Frequency ranges</subject><subject>Integrated circuits</subject><subject>Low-noise amplifier (LNA)</subject><subject>Low-noise amplifiers</subject><subject>noise figure (NF)</subject><subject>Noise levels</subject><subject>Noise measurement</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>Wireless communication</subject><issn>2771-957X</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1LAzEQhoMoWGp_gOAh4Dl18rXZHNuqVdhaoS31FrK7WUnZ7takpfjv3VIRTzPMPO8MPAjdUhhSCvohm62XQwaMDzlTWipxgXpMKUq0TNPLv159XKNBjBsAYDphCZU9NF3V-2Dr9kje26MLeI3J2DYlzrrJW-ujw6PtrvaV73aPLvrPBvsGUw6k2eKFnzo89pPZfHGDripbRzf4rX20en5aTl5INp--TkYZKZhI9kSBtSqpnCjyNC84V6kCBVAwC0ozJxLQqrScamlz6STPoaScsVS73JYAKe-j-_PdXWi_Di7uzaY9hKZ7aThoxhQVnHYUPVNFaGMMrjK74Lc2fBsK5qTMnJSZkzLzq6zL3J0z3jn3j6dCJEzyH3dQY_I</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>Smirnova, Kateryna</creator><creator>Bohn, Christian</creator><creator>Kaynak, Mehmet</creator><creator>Ulusoy, Ahmet Cagri</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Two designs implemented in 0.13-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology demonstrate state-of-the-art performance, whereas <inline-formula> <tex-math notation="LaTeX">P_{\mathrm{DC}}</tex-math> </inline-formula> is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 and 16 dB and a noise figure (NF) of 4 and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>24.5 and <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>26.5 dBm, respectively. The occupied integrated circuit (IC) area in both cases is 0.018 and 0.014 mm<inline-formula> <tex-math notation="LaTeX">^2</tex-math> </inline-formula> excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.]]></abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/LMWT.2023.3279574</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-3583-8252</orcidid><orcidid>https://orcid.org/0000-0002-1572-7208</orcidid><orcidid>https://orcid.org/0000-0001-5718-2827</orcidid></addata></record> |
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| subjects | <inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> W</tex-math> </inline-formula>-band Amplifier design Amplifiers BiCMOS integrated circuits CMOS Frequency measurement Frequency ranges Integrated circuits Low-noise amplifier (LNA) Low-noise amplifiers noise figure (NF) Noise levels Noise measurement Silicon germanides Silicon germanium Wireless communication |
| title | Ultralow-Power W -Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS |
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