Ultralow-Power W -Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS

This letter presents a power consumption reduction aspect for a 100-GHz low-noise amplifier (LNA). Two designs implemented in 0.13- \mu m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology demonstrate state-of-the-art performance, whereas P_{\mathrm{DC}} is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 and 16 dB and a noise figure (NF) of 4 and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is - 24.5 and - 26.5 dBm, respectively. The occupied integrated circuit (IC) area in both cases is 0.018 and 0.014 mm ^2 excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.