A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe

A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe

This letter presents a four-way power combined D -band power amplifier (PA) in 0.13- \mu \text{m} SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as powe...

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Veröffentlicht in:IEEE microwave and wireless components letters 2022-11, Vol.32 (11), p.1343-1346
Hauptverfasser: Aksoyak, Ibrahim Kagan, Mock, Matthias, Kaynak, Mehmet, Ulusoy, Ahmet Cagri
Format: Artikel
Sprache:eng
Schlagworte:
D-band
efficiency
Emitters
Impedance
Loss measurement
Maximum power
millimeter-wave (mm-wave)
Performance evaluation
Power amplifiers
power amplifiers (PAs)
Power generation
power-combining
SiGe
Silicon
Silicon germanides
Silicon germanium
Topology
Wireless communication
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Beschreibung
Zusammenfassung:This letter presents a four-way power combined D -band power amplifier (PA) in 0.13- \mu \text{m} SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) D -band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2022.3178933