A 1-42 GHz GaN Distributed Amplifier With Adjustable Gain by Voltage-Controlled Switch

A 1-42 GHz GaN Distributed Amplifier With Adjustable Gain by Voltage-Controlled Switch

A 1-42 GHz gain-variable distributed amplifier is presented in the letter using a 0.13- \mu \text{m} gallium nitride (GaN) process. The amplifier can achieve a gain tuning range of about 3 dB over the entire frequency band by voltage-controlled switching. The chip area of the amplifier is about 1....

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Veröffentlicht in:IEEE microwave and wireless components letters 2022-04, Vol.32 (4), p.339-342
Hauptverfasser: Hu, Zhifu, Zhang, Qijun, Ma, Kaixue
Format: Artikel
Sprache:eng
Schlagworte:
Adjustable gain
Amplification
distributed amplifier
Distributed amplifiers
Electric potential
Frequencies
Gain
Gallium nitride
gallium nitride (GaN)
Gallium nitrides
HEMTs
Logic gates
MODFETs
switch
Switches
Tuning
ultrawideband
Voltage
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Beschreibung
Zusammenfassung:A 1-42 GHz gain-variable distributed amplifier is presented in the letter using a 0.13- \mu \text{m} gallium nitride (GaN) process. The amplifier can achieve a gain tuning range of about 3 dB over the entire frequency band by voltage-controlled switching. The chip area of the amplifier is about 1.9\times1.1 mm 2 . The average output power of the amplifier is greater than 27.5 dBm over the entire bandwidth. A wider gain tuning range can be achieved by adding more voltage-controlled switches.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2021.3123947