The Charge-Based Flicker Noise Model for HEMTs

The Charge-Based Flicker Noise Model for HEMTs

The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling meth...

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Veröffentlicht in:IEEE microwave and wireless components letters 2022-02, Vol.32 (2), p.125-128
Hauptverfasser: Luo, Haorui, Yan, Xu, Hu, Wenrui, Guo, Yongxin
Format: Artikel
Sprache:eng
Schlagworte:
Adaptation models
Flicker
Flicker noise
HEMTs
High electron mobility transistors
high electron mobility transistors (HEMTs)
Integrated circuit modeling
Logic gates
Low noise
Mathematical models
Modelling
MODFETs
Noise
noise model
Noise prediction
Semiconductor device modeling
Semiconductor devices
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Beschreibung
Zusammenfassung:The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling method to the charge-based MIT virtual source (MVS) HEMT model. This model is highly compatible with the MVS HEMT model. It can predict the flicker noise performance in a physically rigorous and accurate way. This model is verified by the excellent agreement between simulations and measurement results.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2021.3118708