220-325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

This letter presents a broadband and high-gain differential amplifier (DA) with a common-mode rejection circuit (CMRC) using 60-nm InP-HEMT technology. The differential pair in the DA is designed with common-source FET amplifiers. The CMRC implemented by short and open stubs with resistor degenerate...

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Veröffentlicht in:IEEE microwave and wireless components letters 2021-06, Vol.31 (6), p.709-712
Hauptverfasser: Hamada, Hiroshi, Tsutsumi, Takuya, Pander, Adam, Matsuzaki, Hideaki, Sugiyama, Hiroki, Takahashi, Hiroyuki, Nosaka, Hideyuki
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Sprache:eng
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Zusammenfassung:This letter presents a broadband and high-gain differential amplifier (DA) with a common-mode rejection circuit (CMRC) using 60-nm InP-HEMT technology. The differential pair in the DA is designed with common-source FET amplifiers. The CMRC implemented by short and open stubs with resistor degenerates the common-mode gain of the DA. Rat-race couplers (RRCs) are used as baluns for DA input and output. The fabricated DA chip exhibits superior gain and output power of 25 ± 3.5 dB and >3.5 dBm over the full WR3.4-band (220-325 GHz). Furthermore, the common-mode rejection is experimentally investigated using the common-mode test circuit of the DA. It is suggested that the fabricated DA chip has high common-mode rejection.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2021.3061662