High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications

This letter makes a fast and efficient analysis of the scalable differential through-silicon via (TSV) configuration in 3-D integrated circuits. The equivalent-circuit model of a differential TSV pair is described. The critical differential characteristics are analyzed and calculated in terms of a l...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2017-08, Vol.27 (8), p.721-723
Hauptverfasser:	Qu, Chenbing, Ding, Ruixue, Zhu, Zhangming
Format:	Artikel
Sprache:	eng
Schlagworte:	Admittance Analytical models Circuits Computational modeling Computer simulation Differential through silicon vias (TSVs) electrical characteristics Electrical properties equivalent-circuit model Impedance Integrated circuit modeling Integrated circuits Mathematical models Scattering parameters Silicon Three dimensional models Through-silicon vias
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Beschreibung
Zusammenfassung:	This letter makes a fast and efficient analysis of the scalable differential through-silicon via (TSV) configuration in 3-D integrated circuits. The equivalent-circuit model of a differential TSV pair is described. The critical differential characteristics are analyzed and calculated in terms of a lumped-circuit model and the effective loop parameters of multi-TSVs. The calculated results are validated by the 3-D full-wave field solver high frequency simulator structure (HFSS) over a wide frequency range.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2017.2723998