A 0.71-pJ/b ON-OFF Keying K -Band Oscillator Using an InP-Based Resonant Tunneling Diode

This letter presents the high-data rate performance of a 7-Gb/s resonant tunneling diode (RTD)-based on-off keying (OOK) oscillator core with a heterojunction bipolar transistor (HBT) switch design. It is found that the integrated HBT switch improves the data rate of the RTD OOK oscillator IC by min...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2017-07, Vol.27 (7), p.660-662
Hauptverfasser:	Park, Jaehong, Lee, Jooseok, Lee, Kiwon, Yang, Kyounghoon
Format:	Artikel
Sprache:	eng
Schlagworte:	Design improvements Energy efficiency Energy management Heterojunction bipolar transistors high-data rate low power On-Off Keying ON-OFF keying (OOK) oscillator Oscillators Power efficiency Resonant tunneling Resonant tunneling devices resonant tunneling diode (RTD) Switches Transmitters Wireless communication Wireless sensor networks
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Beschreibung
Zusammenfassung:	This letter presents the high-data rate performance of a 7-Gb/s resonant tunneling diode (RTD)-based on-off keying (OOK) oscillator core with a heterojunction bipolar transistor (HBT) switch design. It is found that the integrated HBT switch improves the data rate of the RTD OOK oscillator IC by minimizing the RC delay time in the previous direct driving oscillator design. The fabricated OOK oscillator IC shows an energy efficiency of 0.71-pJ/b which is the best value reported to date to the authors' knowledge in a related frequency range.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2017.2711505