Temperature Influence on GaN HEMT Equivalent Circuit

Temperature Influence on GaN HEMT Equivalent Circuit

The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic...

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Veröffentlicht in:IEEE microwave and wireless components letters 2016-10, Vol.26 (10), p.813-815
Hauptverfasser: Crupi, Giovanni, Raffo, Antonio, Avolio, Gustavo, Schreurs, Dominique M. M.-P, Vannini, Giorgio, Caddemi, Alina
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Equivalent circuit
Equivalent circuits
Gallium nitride
gallium nitride (GaN)
HEMTs
high electron-mobility transistor (HEMT)
Radio frequency
temperature
Temperature dependence
Temperature measurement
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Zusammenfassung:The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2016.2601487