The Resistive-Reactive Class-J Power Amplifier Mode
This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive cla...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2015-10, Vol.25 (10), p.666-668 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Friesicke, Christian Quay, Rudiger Jacob, Arne F. |
| description | This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior. |
| doi_str_mv | 10.1109/LMWC.2015.2463211 |
| format | Article |
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To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2015.2463211</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Class-J ; Current measurement ; Frequency conversion ; Gallium nitride ; Harmonic analysis ; HEMTs ; Impedance ; losses ; power amplifiers (PAs) ; Voltage measurement</subject><ispartof>IEEE microwave and wireless components letters, 2015-10, Vol.25 (10), p.666-668</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-4e66caecabd48e5b2a4ce3c416c6fb1f8b8d1b74baa33d9dee3059c93c008cf83</citedby><cites>FETCH-LOGICAL-c429t-4e66caecabd48e5b2a4ce3c416c6fb1f8b8d1b74baa33d9dee3059c93c008cf83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7185478$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7185478$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Friesicke, Christian</creatorcontrib><creatorcontrib>Quay, Rudiger</creatorcontrib><creatorcontrib>Jacob, Arne F.</creatorcontrib><title>The Resistive-Reactive Class-J Power Amplifier Mode</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.</description><subject>Class-J</subject><subject>Current measurement</subject><subject>Frequency conversion</subject><subject>Gallium nitride</subject><subject>Harmonic analysis</subject><subject>HEMTs</subject><subject>Impedance</subject><subject>losses</subject><subject>power amplifiers (PAs)</subject><subject>Voltage measurement</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAUhYMoOKc_QHwp-Jyam6Rp8jiKTqVDGRMfQ5reYkdnZ7Ip_ntbNny638M558JHyDWwFICZu3LxXqScQZZyqQQHOCETyDJNIVfydGQBFAQz5-QixjVjILWECRGrD0yWGNu4a7-RLtH5EZKiczHS5-S1_8GQzDbbrm3agRZ9jZfkrHFdxKvjnZK3h_tV8UjLl_lTMSupl9zsqESlvEPvqlpqzCrupEfhJSivmgoaXekaqlxWzglRmxpRsMx4Izxj2jdaTMntYXcb-q89xp1d9_vwOby0kHPDQSo2puCQ8qGPMWBjt6HduPBrgdnRjR3d2NGNPboZOjeHTouI__kcdCZzLf4AslBfUw</recordid><startdate>20151001</startdate><enddate>20151001</enddate><creator>Friesicke, Christian</creator><creator>Quay, Rudiger</creator><creator>Jacob, Arne F.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2015.2463211</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2015-10, Vol.25 (10), p.666-668 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Class-J Current measurement Frequency conversion Gallium nitride Harmonic analysis HEMTs Impedance losses power amplifiers (PAs) Voltage measurement |
| title | The Resistive-Reactive Class-J Power Amplifier Mode |
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