The Resistive-Reactive Class-J Power Amplifier Mode
This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive cla...
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Veröffentlicht in: | IEEE microwave and wireless components letters 2015-10, Vol.25 (10), p.666-668 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior. |
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ISSN: | 1531-1309 2771-957X 1558-1764 2771-9588 |
DOI: | 10.1109/LMWC.2015.2463211 |