A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process

This letter demonstrates a low-power, Q -band, direct-conversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers - 9.3 dBm RF power at 39 GHz. The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 μm SiGe BiCMOS process and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE microwave and wireless components letters 2012-06, Vol.22 (6), p.327-329
Hauptverfasser:	Gupta, A. K., Joohwa Kim, Asbeck, P., Buckwalter, J. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Baseband Circuit properties Direct conversion transmitter Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology I/Q modulator Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Mixers Q-band Quadrature amplitude modulation Radio frequency Radiocommunications Signal convertors Silicon germanium System-on-a-chip Telecommunications Telecommunications and information theory Transmitters. Receivers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This letter demonstrates a low-power, Q -band, direct-conversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers - 9.3 dBm RF power at 39 GHz. The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 μm SiGe BiCMOS process and occupies an area of 1.5 mm 2 .
ISSN:	1531-1309 1558-1764
DOI:	10.1109/LMWC.2012.2197379