A Ka-Band Low Noise Amplifier Using Forward Combining Technique

This letter presents a wideband low noise amplifier (LNA) implemented in 0.15 μm InGaAs pHEMT technology. The forward combining technique is proposed to boost the amplifier gain at Ka band. Through gain enhancement, the noise characteristic of the amplifier can also be reduced. The Ka-band LNA exhib...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2010-12, Vol.20 (12), p.672-674
Hauptverfasser:	Yueh-Hua Yu, Wei-Hong Hsu, Chen, Yi-Jan Emery
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Feed forward Gain Indium gallium arsenide Ka band Low noise low noise amplifier (LNA) Low-noise amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Noise Noise levels Noise measurement pHEMT PHEMTs Semiconductor device measurement Voltage Wideband
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Zusammenfassung:	This letter presents a wideband low noise amplifier (LNA) implemented in 0.15 μm InGaAs pHEMT technology. The forward combining technique is proposed to boost the amplifier gain at Ka band. Through gain enhancement, the noise characteristic of the amplifier can also be reduced. The Ka-band LNA exhibits a very wide 3 dB bandwidth from 29 to 44 GHz with the power gain of 14.2 dB. The measured noise figure varies between 2.0 and 3.3 dB from 26.5 to 40 GHz. The supply voltage of the circuit is 1.2 V and the power consumption is 38 mW. The overall chip size is 650 μm×720 μm.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2010.2085425