Tunable Solidly Mounted Thin Film Bulk Acoustic Resonators Based on Ba }}} Films
Electrically tunable solidly mounted thin film bulk acoustic resonators based on Ba x Sr 1-x TiO 3 films are reported for the first time. The films are acoustically isolated from the silicon substrate by a Bragg reflector stack. Applying DC bias induces piezoelectric effect and an acoustic resonance...
Gespeichert in:
Veröffentlicht in: | IEEE microwave and wireless components letters 2007-09, Vol.17 (9), p.655-657 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Electrically tunable solidly mounted thin film bulk acoustic resonators based on Ba x Sr 1-x TiO 3 films are reported for the first time. The films are acoustically isolated from the silicon substrate by a Bragg reflector stack. Applying DC bias induces piezoelectric effect and an acoustic resonance at approximately 4 GHz. Under 10 V applied DC bias the resonance frequency of the resonators based on Ba 0.25 Sr 0.75 TiO 3 films is tuned 1.2% to lower frequencies. The Q-factor of these resonators is approximately 120, and the electromechanical coupling coefficient is 0.5%. The resonant frequency of the BaTiO 3 based resonators shifts upwards 1.3% under 10 V DC bias, and the -factor is approximately 30, with an electromechanical coupling coefficient of 6.2%. |
---|---|
ISSN: | 1531-1309 1558-1764 |
DOI: | 10.1109/LMWC.2007.903445 |