Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate
The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added effic...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2003-03, Vol.13 (3), p.99-101 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Vellas, N. Gaquiere, C. Minko, A. Hoel, V. De Jaeger, J.C. Cordier, Y. Semond, F. |
| description | The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm 2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art. |
| doi_str_mv | 10.1109/LMWC.2003.810117 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LMWC_2003_810117</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1187394</ieee_id><sourcerecordid>901725898</sourcerecordid><originalsourceid>FETCH-LOGICAL-c447t-dc7026af2bc5ae71aba6d75484d58c76375372b6ec3da60631e959c8337ef2f73</originalsourceid><addsrcrecordid>eNp9kd9LHDEQx5ei0Kv6XuhLEKxPe2byY5M8ynHeCacWqvShlJDLZWtkvbWZXUX_erPcwUEffBhmmPnMMDPfovgKdAxAzdni6tdkzCjlYw0UQH0qRiClLkFVYm-IOZTAqflcfEF8oBSEFjAqfv5oX0IiKWDfdEhcRwSZzd9IW5PzZuauz7KR-fTqFkm7Jvfx7_3ARuzicyAYm-hz-jcA_CHYL7FLrguHxX7tGgxHW39Q3F1MbyfzcnEzu5ycL0ovhOrKlVeUVa5mSy9dUOCWrlopmfdaSe1VxZXkii2r4PnKVbTiEIw0XnOuQs1qxQ-K083cp9T-6wN29jGiD03j1qHt0RoKikltdCa_f0gyZZiQRmbw-D_woe3TOl9htRYs_1cMEN1APrWIKdT2KcVHl14tUDuIYQcx7CCG3YiRW062cx1619TJrX3EXZ_I9-UlMvdtw8UQwq4MWnEj-DteaY8S</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884220045</pqid></control><display><type>article</type><title>Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate</title><source>IEEE Electronic Library (IEL)</source><creator>Vellas, N. ; Gaquiere, C. ; Minko, A. ; Hoel, V. ; De Jaeger, J.C. ; Cordier, Y. ; Semond, F.</creator><creatorcontrib>Vellas, N. ; Gaquiere, C. ; Minko, A. ; Hoel, V. ; De Jaeger, J.C. ; Cordier, Y. ; Semond, F.</creatorcontrib><description>The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm 2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2003.810117</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Applied sciences ; Density ; Density measurement ; Electronics ; Exact sciences and technology ; Gain measurement ; Gallium nitride ; Gallium nitrides ; HEMTs ; High electron mobility transistors ; Microwave and submillimeter wave devices, electron transfer devices ; Microwave frequencies ; Microwaves ; MODFETs ; Noise levels ; Power generation ; Power measurement ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Silicon substrates</subject><ispartof>IEEE microwave and wireless components letters, 2003-03, Vol.13 (3), p.99-101</ispartof><rights>2003 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-dc7026af2bc5ae71aba6d75484d58c76375372b6ec3da60631e959c8337ef2f73</citedby><cites>FETCH-LOGICAL-c447t-dc7026af2bc5ae71aba6d75484d58c76375372b6ec3da60631e959c8337ef2f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1187394$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1187394$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14606279$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Vellas, N.</creatorcontrib><creatorcontrib>Gaquiere, C.</creatorcontrib><creatorcontrib>Minko, A.</creatorcontrib><creatorcontrib>Hoel, V.</creatorcontrib><creatorcontrib>De Jaeger, J.C.</creatorcontrib><creatorcontrib>Cordier, Y.</creatorcontrib><creatorcontrib>Semond, F.</creatorcontrib><title>Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm 2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art.</description><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Density</subject><subject>Density measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain measurement</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>Microwave frequencies</subject><subject>Microwaves</subject><subject>MODFETs</subject><subject>Noise levels</subject><subject>Power generation</subject><subject>Power measurement</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Silicon substrates</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kd9LHDEQx5ei0Kv6XuhLEKxPe2byY5M8ynHeCacWqvShlJDLZWtkvbWZXUX_erPcwUEffBhmmPnMMDPfovgKdAxAzdni6tdkzCjlYw0UQH0qRiClLkFVYm-IOZTAqflcfEF8oBSEFjAqfv5oX0IiKWDfdEhcRwSZzd9IW5PzZuauz7KR-fTqFkm7Jvfx7_3ARuzicyAYm-hz-jcA_CHYL7FLrguHxX7tGgxHW39Q3F1MbyfzcnEzu5ycL0ovhOrKlVeUVa5mSy9dUOCWrlopmfdaSe1VxZXkii2r4PnKVbTiEIw0XnOuQs1qxQ-K083cp9T-6wN29jGiD03j1qHt0RoKikltdCa_f0gyZZiQRmbw-D_woe3TOl9htRYs_1cMEN1APrWIKdT2KcVHl14tUDuIYQcx7CCG3YiRW062cx1619TJrX3EXZ_I9-UlMvdtw8UQwq4MWnEj-DteaY8S</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Vellas, N.</creator><creator>Gaquiere, C.</creator><creator>Minko, A.</creator><creator>Hoel, V.</creator><creator>De Jaeger, J.C.</creator><creator>Cordier, Y.</creator><creator>Semond, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>H8D</scope><scope>7QF</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20030301</creationdate><title>Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate</title><author>Vellas, N. ; Gaquiere, C. ; Minko, A. ; Hoel, V. ; De Jaeger, J.C. ; Cordier, Y. ; Semond, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-dc7026af2bc5ae71aba6d75484d58c76375372b6ec3da60631e959c8337ef2f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Applied sciences</topic><topic>Density</topic><topic>Density measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain measurement</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>Microwave frequencies</topic><topic>Microwaves</topic><topic>MODFETs</topic><topic>Noise levels</topic><topic>Power generation</topic><topic>Power measurement</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vellas, N.</creatorcontrib><creatorcontrib>Gaquiere, C.</creatorcontrib><creatorcontrib>Minko, A.</creatorcontrib><creatorcontrib>Hoel, V.</creatorcontrib><creatorcontrib>De Jaeger, J.C.</creatorcontrib><creatorcontrib>Cordier, Y.</creatorcontrib><creatorcontrib>Semond, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Aerospace Database</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vellas, N.</au><au>Gaquiere, C.</au><au>Minko, A.</au><au>Hoel, V.</au><au>De Jaeger, J.C.</au><au>Cordier, Y.</au><au>Semond, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2003-03-01</date><risdate>2003</risdate><volume>13</volume><issue>3</issue><spage>99</spage><epage>101</epage><pages>99-101</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm 2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2003.810117</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2003-03, Vol.13 (3), p.99-101 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Density Density measurement Electronics Exact sciences and technology Gain measurement Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Microwave and submillimeter wave devices, electron transfer devices Microwave frequencies Microwaves MODFETs Noise levels Power generation Power measurement Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon substrates |
| title | Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T08%3A53%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Power%20results%20at%204%20GHz%20of%20AlGaN/GaN%20HEMTs%20on%20high%20resistive%20silicon%20%5B111%5D%20substrate&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Vellas,%20N.&rft.date=2003-03-01&rft.volume=13&rft.issue=3&rft.spage=99&rft.epage=101&rft.pages=99-101&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2003.810117&rft_dat=%3Cproquest_RIE%3E901725898%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884220045&rft_id=info:pmid/&rft_ieee_id=1187394&rfr_iscdi=true |