Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added effic...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2003-03, Vol.13 (3), p.99-101
Hauptverfasser:	Vellas, N., Gaquiere, C., Minko, A., Hoel, V., De Jaeger, J.C., Cordier, Y., Semond, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Density Density measurement Electronics Exact sciences and technology Gain measurement Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Microwave and submillimeter wave devices, electron transfer devices Microwave frequencies Microwaves MODFETs Noise levels Power generation Power measurement Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon substrates
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Beschreibung
Zusammenfassung:	The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm 2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2003.810117