6H-SiC-Fe Nanostructures Studied by Atom Probe Tomography

6H-SiC-Fe Nanostructures Studied by Atom Probe Tomography

Low-dose (2 at.%) Fe implantation in 6H-SiC (0001), followed by high-temperature annealing, is investigated with the aim of obtaining a diluted magnetic semiconductor (DMS). The effects of rapid thermal annealing on the microstructure were examined by atom probe tomography. The study shows the evide...

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Veröffentlicht in:IEEE magnetics letters 2018-01, Vol.9, p.1-3
Hauptverfasser: Diallo, Lindor, Fnidiki, Abdeslem, Lechevallier, Luc, Zarefy, Amjaad, Juraszek, Jean, Cuvilly, Fabien, Blum, Ivan, Viret, Michel, Marteau, Marc, Eyidi, Dominique, Declemy, Alain
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
atom probe tomography
Chemicals
Condensed Matter
Correlation analysis
diluted magnetic semiconductor
Dilution
Implantation
Iron
Magnetic properties
Materials Science
nanoclusters
Nanoparticles
Physics
Probes
Silicon
Silicon carbide
Spin electronics
Tomography
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Zusammenfassung:Low-dose (2 at.%) Fe implantation in 6H-SiC (0001), followed by high-temperature annealing, is investigated with the aim of obtaining a diluted magnetic semiconductor (DMS). The effects of rapid thermal annealing on the microstructure were examined by atom probe tomography. The study shows the evidence of the formation of nanoclusters after annealing, some of which are magnetic. The structural study is correlated with the magnetic properties in order to determine the optimum conditions for fabricating a DMS.
ISSN:1949-307X
1949-3088
DOI:10.1109/LMAG.2018.2829109