Demonstration of Low-Power Three-Dimensional CMOS Inverters based on Si p-Tunnel FET and ITO n-FET

In this work, low-power CMOS inverter and 5-stage ring oscillator (RO) are demonstrated based on heterogeneous 3D integration of vertically stacked FEOL p-type silicon tunnel FET (TFET) and BEOL n-type indium-tin-oxide (ITO) FET. Owing to the low off-state current of both p-type and n-type FET, our...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2025-01, p.1-1
Hauptverfasser:	Tong, Anyu, Wang, Kaifeng, Hu, Qianlan, Wang, Zhiyu, Xiong, Xiong, Yan, Shiwei, Zhu, Shenwu, Li, Qijun, Wu, Yongqin, Ren, Ye, Bu, Weihai, Huang, Qianqian, Wu, Yanqing, Huang, Ru
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits CMOS Fabrication Field effect transistors Heterogeneous 3D integration Indium tin oxide Inverters Logic gates Metals ring oscillator Silicon TFETs Three-dimensional displays tunnel FET
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!