16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

A novel structure of Collector-side Injection-Enhanced 4H-SiC Reverse-Conducting IGBT (CIE-RC-IGBT) is proposed by introducing a high-resistance P-bottom region on the collector side. The operation mechanism of collector-side injection enhancement and its simulation verification are presented. Durin...

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Veröffentlicht in:	IEEE electron device letters 2024-06, Vol.45 (6), p.1064-1067
Hauptverfasser:	Yu, Qisheng, Huang, Jiaweiwen, Shen, Zhigang, Zhang, Aohang, Chen, Wensuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density collector-side injection-enhanced Conduction Doping Electric potential High-voltage techniques Insulated gate bipolar transistors Logic gates RC-IGBT reverse conducting voltage reverse recovery Silicon Silicon carbide Voltage
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