16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

A novel structure of Collector-side Injection-Enhanced 4H-SiC Reverse-Conducting IGBT (CIE-RC-IGBT) is proposed by introducing a high-resistance P-bottom region on the collector side. The operation mechanism of collector-side injection enhancement and its simulation verification are presented. During the reverse conduction of CIE-RC-IGBT, the CIE effect increases the carrier concentration on the collector side, resulting in a much lower reverse conducting voltage ( \text{V}_{\text {F}}{)} . Simulation results show that the VF of CIE-RC-IGBT is 4.04V, approximately 29.5% lower than the 5.73V of Con-RC-IGBT. The new CIE structure does not sacrifice other operation, such as forward conduction, turn off, and blocking characteristics, except for a slight increase in reverse recovery current.