Miniaturized High-Selectivity High-Resistivity-Silicon IPD Bandpass Filter Based on Multiple Transmission Paths

Miniaturized High-Selectivity High-Resistivity-Silicon IPD Bandpass Filter Based on Multiple Transmission Paths

In this letter, a miniaturized bandpass filter chip is designed and implemented on high-resistivity-silicon (HRS) integrated passive device (IPD) technology. The filter is designed into a three-path topology, which can generate multiple transmission zeros to achieve a high roll-off rate at the passb...

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Veröffentlicht in:IEEE electron device letters 2024-04, Vol.45 (4), p.534-537
Hauptverfasser: Zhang, Jun, Xu, Jin-Xu, Yao, Cong, Zhang, Xiu Yin
Format: Artikel
Sprache:eng
Schlagworte:
Band-pass filters
Bandpass filter
Bandpass filters
Capacitors
Electrical resistivity
Filtering theory
Frequencies
high selectivity
Inductors
Insertion loss
integrated passive device (IPD)
N77
on-chip filter
Passband
Resonant frequency
Resonator filters
Silicon
Topology
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Beschreibung
Zusammenfassung:In this letter, a miniaturized bandpass filter chip is designed and implemented on high-resistivity-silicon (HRS) integrated passive device (IPD) technology. The filter is designed into a three-path topology, which can generate multiple transmission zeros to achieve a high roll-off rate at the passband edge and good rejection in a very wide stopband. For validation, the filter chip operating at 5G N77 frequency band is fabricated with a compact size of 1.1\times0.7 mm2 on IPD technology. Measured results show an in-band insertion loss of smaller than 1.7 dB and a wide stopband from 5.39 to 31.5 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3364692