Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics

The high-performance atomic layer deposited (ALD) ultrathin (~2 nm) amorphous InZnO ( {a} -IZO, indium: Zinc ≈ 6:4) channel thin-film transistors (TFTs) with a short channel length ( \text{L}_{\mathbf {\textit {ch}}} ) of 50 nm were presented. Furthermore, the gate stability was evaluated using temp...

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