Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory

The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios ( CHRRs ). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the case of HC VNAND during program/erase...

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Veröffentlicht in:	IEEE electron device letters 2023-06, Vol.44 (6), p.1-1
Hauptverfasser:	Uhm, Ji Ho, Chang, Jin Ho, Kim, Joonggyu, Kwon, Eunmee, Choi, Woo Young
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models azimuthal redistribution (AR) channel hole remaining ratio (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">CHRR ) Data models data retention Electron traps Flash memories Flash memory (computers) Hemi-cylindrical vertical NAND (HC VNAND) SONOS devices Three-dimensional displays Tunneling
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Zusammenfassung:	The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios ( CHRRs ). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the case of HC VNAND during program/erase operations. Hence, in addition to conventional lateral migration, a novel charge redistribution mechanism-azimuthal redistribution (AR)- is proposed. The simulation and experimental results indicate that AR is a major component of the data retention as a function of the CHRR of HC VNAND cells.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2023.3265986