Fast Switching NO2-doped p-Channel Diamond MOSFETs

This letter demonstrates the fast-switching characteristics of a normally-on NO 2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET). A very fast-switching operation was realized for a diamond MOSFET with a turn-on (t on ) and turn-off (t off ) time of as low as 9.97 and 9.63 ns, respectively. The parasitic parameters that influence the switching time and switching loss were measured as input capacitance, C iss of 245 nF/mm, output capacitance, C oss of 732 pF/mm, and reverse capacitance, C rss of 17 pF/mm. A total switching energy loss was determined to be only 208 pJ. This report suggests the potential of NO 2 -doped diamond MOSFETs for prospective high-speed switching applications.