Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs With a Field Plate
Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this letter, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire...
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Veröffentlicht in: | IEEE electron device letters 2021-11, Vol.42 (11), p.1596-1598 |
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Sprache: | eng |
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Zusammenfassung: | Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this letter, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO 2 film. The film acts as a field moderator in the device drain region. Reference devices without a field plate exhibit a transconductance of 2.5 mS/ \mu \text{m} , while devices with a 120-nm-long field plate show 1.5 mS/ \mu \text{m} but a three times increase in breakdown voltage. Measurements show that the field-screening effect attributes to reduced band-to-band tunneling and impact ionization, thereby reducing the parasitic bipolar effect in the MOSFET channel as well. The devices show promise in applications in circuits and systems requiring large power-handling. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2021.3115022 |