Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection

High-performance solar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to ±175 V. The device has shown record p...

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Veröffentlicht in:	IEEE electron device letters 2020-12, Vol.41 (12), p.1790-1793
Hauptverfasser:	Dixit, Tejendra, Tripathi, Akash, Solanke, Swanand V., Ganapathi, K. L., Rao, M. S. Ramachandra, Singh, Vipul
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Copper oxides CuO nanostructures Dark current Engineering Engineering, Electrical & Electronic Nanostructures Photoconductivity Photodetectors Photonic band gap Quantum efficiency Science & Technology Sensitivity solar-blind photo-detection solution process Technology Ultra-wide bandgap ultraviolet-C Wide bandgap semiconductors
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