Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection

High-performance solar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to ±175 V. The device has shown record p...

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Veröffentlicht in:	IEEE electron device letters 2020-12, Vol.41 (12), p.1790-1793
Hauptverfasser:	Dixit, Tejendra, Tripathi, Akash, Solanke, Swanand V., Ganapathi, K. L., Rao, M. S. Ramachandra, Singh, Vipul
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Copper oxides CuO nanostructures Dark current Nanostructures Photoconductivity Photodetectors Photonic band gap Quantum efficiency Sensitivity solar-blind photo-detection solution process Ultra-wide bandgap ultraviolet-C Wide bandgap semiconductors
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Zusammenfassung:	High-performance solar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to ±175 V. The device has shown record photo-sensitivity of 610, photo-responsivity of 14.02 A/W and photo-detectivity of 3.59 × 10 13 cmHz 1/2 W -1 in the UV-C region. The ratio of photo-responsivities at 210 nm and 500 nm i.e. R 210 /R 500 was found to be 5.05 × 10 4 . Additionally, the device has shown external quantum efficiency of ~5900 % at 210 nm excitation. This letter will establish CuO as one of the most promising ultra-wide bandgap semiconductors for costeffective solar blind photo-detection.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2020.3030641