Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection
High-performance solar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to ±175 V. The device has shown record p...
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| Veröffentlicht in: | IEEE electron device letters 2020-12, Vol.41 (12), p.1790-1793 |
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| container_title | IEEE electron device letters |
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| creator | Dixit, Tejendra Tripathi, Akash Solanke, Swanand V. Ganapathi, K. L. Rao, M. S. Ramachandra Singh, Vipul |
| description | High-performance solar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to ±175 V. The device has shown record photo-sensitivity of 610, photo-responsivity of 14.02 A/W and photo-detectivity of 3.59 × 10 13 cmHz 1/2 W -1 in the UV-C region. The ratio of photo-responsivities at 210 nm and 500 nm i.e. R 210 /R 500 was found to be 5.05 × 10 4 . Additionally, the device has shown external quantum efficiency of ~5900 % at 210 nm excitation. This letter will establish CuO as one of the most promising ultra-wide bandgap semiconductors for costeffective solar blind photo-detection. |
| doi_str_mv | 10.1109/LED.2020.3030641 |
| format | Article |
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(IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-395bb2ceaa65324bcc99f203b4ffee86f0cac5319a386c82be8bf4497270a6893</citedby><cites>FETCH-LOGICAL-c291t-395bb2ceaa65324bcc99f203b4ffee86f0cac5319a386c82be8bf4497270a6893</cites><orcidid>0000-0002-3758-9360 ; 0000-0003-2900-0971 ; 0000-0002-8693-5733 ; 0000-0002-7806-2151 ; 0000-0002-5088-1307 ; 0000-0002-7182-3907</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9222217$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9222217$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Dixit, Tejendra</creatorcontrib><creatorcontrib>Tripathi, Akash</creatorcontrib><creatorcontrib>Solanke, Swanand V.</creatorcontrib><creatorcontrib>Ganapathi, K. 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This letter will establish CuO as one of the most promising ultra-wide bandgap semiconductors for costeffective solar blind photo-detection.</description><subject>Bias</subject><subject>Copper oxides</subject><subject>CuO nanostructures</subject><subject>Dark current</subject><subject>Nanostructures</subject><subject>Photoconductivity</subject><subject>Photodetectors</subject><subject>Photonic band gap</subject><subject>Quantum efficiency</subject><subject>Sensitivity</subject><subject>solar-blind photo-detection</subject><subject>solution process</subject><subject>Ultra-wide bandgap</subject><subject>ultraviolet-C</subject><subject>Wide bandgap semiconductors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpeA562zn8l6s7VaodKCFo_LZrPbpqTZuElB_70pLc7lheF5Z-BB6JbAiBBQD_Pp84gChREDBpKTMzQgQmQYhGTnaAApJ5gRkJfoqm23AITzlA_Q-6rqosFfZeGSsamLtWmSSWgaF5PFT798TGblepMsXfQh7kxtXfIRKhPxuCrrIlluQhdw4TpnuzLU1-jCm6p1N6ccotXL9HMyw_PF69vkaY4tVaTDTIk8p9YZIwWjPLdWKU-B5dx75zLpwRorGFGGZdJmNHdZ7jlXKU3ByEyxIbo_3m1i-N67ttPbsI91_1JTLgVnKSjRU3CkbAxtG53XTSx3Jv5qAvogTffS9EGaPknrK3fHSumc-8cV7Yek7A_3JGb3</recordid><startdate>20201201</startdate><enddate>20201201</enddate><creator>Dixit, Tejendra</creator><creator>Tripathi, Akash</creator><creator>Solanke, Swanand V.</creator><creator>Ganapathi, K. 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Ramachandra ; Singh, Vipul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-395bb2ceaa65324bcc99f203b4ffee86f0cac5319a386c82be8bf4497270a6893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Bias</topic><topic>Copper oxides</topic><topic>CuO nanostructures</topic><topic>Dark current</topic><topic>Nanostructures</topic><topic>Photoconductivity</topic><topic>Photodetectors</topic><topic>Photonic band gap</topic><topic>Quantum efficiency</topic><topic>Sensitivity</topic><topic>solar-blind photo-detection</topic><topic>solution process</topic><topic>Ultra-wide bandgap</topic><topic>ultraviolet-C</topic><topic>Wide bandgap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dixit, Tejendra</creatorcontrib><creatorcontrib>Tripathi, Akash</creatorcontrib><creatorcontrib>Solanke, Swanand V.</creatorcontrib><creatorcontrib>Ganapathi, K. L.</creatorcontrib><creatorcontrib>Rao, M. S. Ramachandra</creatorcontrib><creatorcontrib>Singh, Vipul</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dixit, Tejendra</au><au>Tripathi, Akash</au><au>Solanke, Swanand V.</au><au>Ganapathi, K. L.</au><au>Rao, M. S. Ramachandra</au><au>Singh, Vipul</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2020-12-01</date><risdate>2020</risdate><volume>41</volume><issue>12</issue><spage>1790</spage><epage>1793</epage><pages>1790-1793</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>High-performance solar-blind photo-detection using highly transparent CuO nanostructures (with a bandgap of 4.15 eV) has been demonstrated. The device shows the dark current as low as 0.2 nA (-10 V applied bias) and no signature of breakdown even at a bias up to ±175 V. The device has shown record photo-sensitivity of 610, photo-responsivity of 14.02 A/W and photo-detectivity of 3.59 × 10 13 cmHz 1/2 W -1 in the UV-C region. The ratio of photo-responsivities at 210 nm and 500 nm i.e. R 210 /R 500 was found to be 5.05 × 10 4 . Additionally, the device has shown external quantum efficiency of ~5900 % at 210 nm excitation. This letter will establish CuO as one of the most promising ultra-wide bandgap semiconductors for costeffective solar blind photo-detection.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.3030641</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-3758-9360</orcidid><orcidid>https://orcid.org/0000-0003-2900-0971</orcidid><orcidid>https://orcid.org/0000-0002-8693-5733</orcidid><orcidid>https://orcid.org/0000-0002-7806-2151</orcidid><orcidid>https://orcid.org/0000-0002-5088-1307</orcidid><orcidid>https://orcid.org/0000-0002-7182-3907</orcidid></addata></record> |
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| subjects | Bias Copper oxides CuO nanostructures Dark current Nanostructures Photoconductivity Photodetectors Photonic band gap Quantum efficiency Sensitivity solar-blind photo-detection solution process Ultra-wide bandgap ultraviolet-C Wide bandgap semiconductors |
| title | Ultra-Wide Bandgap Copper Oxide: High Performance Solar-Blind Photo-detection |
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