ZrN-Based Flexible Resistive Switching Memory

ZrN-Based Flexible Resistive Switching Memory

In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellen...

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Veröffentlicht in:IEEE electron device letters 2020-05, Vol.41 (5), p.1-1
Hauptverfasser: Kumar, Dayanand, Chand, Umesh, Siang, Lew Wen, Tseng, Tseung-Yuen
Format: Artikel
Sprache:eng
Schlagworte:
Bend radius
Bending machines
conductive filament
Electrodes
Endurance
Low temperature
Nitrogen
nitrogen ions
Random access memory
resistive switching
Room temperature
RRAM
Switches
Switching
Tin
Zirconium nitrides
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Beschreibung
Zusammenfassung:In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2981529