Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al 2 O 3 as High-κ Gate Dielectric

Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al 2 O 3 as High-κ Gate Dielectric

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Veröffentlicht in:IEEE electron device letters 2020-04, Vol.41 (4), p.565-568
Hauptverfasser: Chien, Yu-Chieh, Londono Ramirez, Horacio, Steudel, Soeren, Rolin, Cedric, Pendurthi, Ravi, Chang, Ting-Chang, Genoe, Jan, Nag, Manoj
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container_title IEEE electron device letters
container_volume 41
creator Chien, Yu-Chieh
Londono Ramirez, Horacio
Steudel, Soeren
Rolin, Cedric
Pendurthi, Ravi
Chang, Ting-Chang
Genoe, Jan
Nag, Manoj
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doi_str_mv 10.1109/LED.2020.2976616
format Article
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title Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al 2 O 3 as High-κ Gate Dielectric
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