A Study on the Charge Trapping Characteristics of High-k Laminated Traps

The charge trapping characteristics of the high-k laminated traps with different thickness ratios were investigated in order to improve the distribution of threshold voltage and the charge loss problems in 3D NAND flash memories with TCAT structure. In this letter, the interfacial layers are formed...

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Veröffentlicht in:	IEEE electron device letters 2019-09, Vol.40 (9), p.1427-1430
Hauptverfasser:	Yoo, Jinhyuk, Kim, SoonKon, Jeon, Woojin, Park, Areum, Choi, Donghee, Choi, Byoungdeog
Format:	Artikel
Sprache:	eng
Schlagworte:	3D NAND CTF Aluminum oxide Annealing Charge density Charge trap data retention Data storage Electron traps Electrons Film thickness Flash memory (computers) Hafnium compounds Hafnium oxide high-k laminated interface trap Laminates Leakage current Leakage currents Logic gates Memory devices Quantum wells Thickness ratio Threshold voltage Trapping
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