Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

This letter reports on the epitaxial growth and device fabrication of metal-organic chemical vapor deposition grown fully vertical GaN-on-Si p-n diodes. A strong dependence in the electrical characteristics and epitaxial growth of n - -GaN drift layer was revealed by analyzing the threading dislocat...

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Veröffentlicht in:IEEE electron device letters 2017-12, Vol.38 (12), p.1720-1723
Hauptverfasser: Mase, Suguru, Hamada, Takeaki, Freedsman, Joseph J., Egawa, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
breakdown voltage
Chemical vapor deposition
drift layer
Electric variables
Epitaxial growth
Fabrication
Gallium nitride
GaN-on-Si
on-resistance
power electronics
Schottky diodes
Substrates
vertical p-n diodes
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Zusammenfassung:This letter reports on the epitaxial growth and device fabrication of metal-organic chemical vapor deposition grown fully vertical GaN-on-Si p-n diodes. A strong dependence in the electrical characteristics and epitaxial growth of n - -GaN drift layer was revealed by analyzing the threading dislocations, and carrier properties of the drift layers and current-voltage characteristics of the fabricated p-n diodes. Further, our GaN-on-Si vertical p-n diode with a 2.3-μm-thick n - -GaN drift layer exhibited an on-resistance of 7.7 mΩ · cm 2 , a turn-on voltage of 3.4 V, and a breakdown voltage of 369 V, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2765340