Uniformity and Retention Improvement of TaO x -Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering
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Veröffentlicht in: | IEEE electron device letters 2017-09, Vol.38 (9), p.1232-1235 |
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container_title | IEEE electron device letters |
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creator | Gong, Tiancheng Luo, Qing Xu, Xiaoxin Yuan, Peng Ma, Haili Chen, Chuanbing Liu, Qi Long, Shibing Lv, Hangbing Liu, Ming |
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doi_str_mv | 10.1109/LED.2017.2734907 |
format | Article |
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title | Uniformity and Retention Improvement of TaO x -Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering |
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