Low-Temperature Solution-Based In 2 O 3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process

Low-Temperature Solution-Based In 2 O 3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process

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Veröffentlicht in:IEEE electron device letters 2017-09, Vol.38 (9), p.1259-1262
Hauptverfasser: Choi, Jae-Won, Han, Soo-Yeun, Nguyen, Manh-Cuong, Nguyen, An Hoang-Thuy, Kim, Jung Yeon, Choi, Sujin, Cheon, Jonggyu, Ji, Hyungmin, Choi, Rino
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container_issue 9
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container_title IEEE electron device letters
container_volume 38
creator Choi, Jae-Won
Han, Soo-Yeun
Nguyen, Manh-Cuong
Nguyen, An Hoang-Thuy
Kim, Jung Yeon
Choi, Sujin
Cheon, Jonggyu
Ji, Hyungmin
Choi, Rino
description
doi_str_mv 10.1109/LED.2017.2734905
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title Low-Temperature Solution-Based In 2 O 3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process
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