Magnetoresistive Effect of Amorphous In-Ga-Zn-O Magnetic Field Sensors

Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect of up to -69% at 25 mT. The detailed measurement r...

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Veröffentlicht in:	IEEE electron device letters 2017-08, Vol.38 (8), p.1143-1145
Hauptverfasser:	Aoki, Koji, Ozawa, Tokuro, Ying-Ying Chen, Chun-Pin Fan, Chuncheng Cheng, Chia-Wei Kuo, Yusheng Huang, Chih-Che Kuo, Matsumoto, Takaaki, Yoshikawa, Akito, Matsuda, Tokiyoshi, Kimura, Mutsumi
Format:	Artikel
Sprache:	eng
Schlagworte:	amorphous giant magnetoresistance In-Ga-Zn-O Indium gallium zinc oxide Magnetic field Magnetic fields Magnetic sensors Magnetoresistivity Sensitivity sensor Sensors Temperature measurement Temperature sensors Thin film transistors Thin films thin-film transistor
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Beschreibung
Zusammenfassung:	Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect of up to -69% at 25 mT. The detailed measurement results are reported and the mechanism for generation of the MR effect is discussed.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2017.2721422