Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

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Veröffentlicht in:IEEE electron device letters 2017-07, Vol.38 (7), p.929-932
Hauptverfasser: Hua, Mengyuan, Wei, Jin, Tang, Gaofei, Zhang, Zhaofu, Qian, Qingkai, Cai, Xiangbin, Wang, Ning, Chen, Kevin J.
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container_issue 7
container_start_page 929
container_title IEEE electron device letters
container_volume 38
creator Hua, Mengyuan
Wei, Jin
Tang, Gaofei
Zhang, Zhaofu
Qian, Qingkai
Cai, Xiangbin
Wang, Ning
Chen, Kevin J.
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doi_str_mv 10.1109/LED.2017.2707473
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title Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer
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