n+Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer

n+Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer

A bonding technique via passivating interlayer formation is proposed for bulk material heterojunction fabrication. n + Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150 °C, the bonded jun...

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Veröffentlicht in:IEEE electron device letters 2017-06, Vol.38 (6), p.716-719
Hauptverfasser: Liu, Tony Chi, Kabuyanagi, Shoichi, Nishimura, Tomonori, Yajima, Takeaki, Toriumi, Akira
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Bonding
Germanium
Hafnium
Heterojunctions
interlayer
Interlayers
Low temperature
passivation
Silicon
Temperature
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Zusammenfassung:A bonding technique via passivating interlayer formation is proposed for bulk material heterojunction fabrication. n + Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150 °C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2699658