Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are investigated for a possible application to infrared (IR) photodetector through subgap density-ofstates over the forbidden bandgap. The origin of the sub-bandgap(hν

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Veröffentlicht in:IEEE electron device letters 2017-05, Vol.38 (5), p.584-587
Hauptverfasser: Lee, Heesung, Kim, Junyeap, Kim, Jaewon, Kim, Seong Kwang, Lee, Yongwoo, Kim, Jae-Young, Jang, Jun Tae, Park, Jaewon, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong
Format: Artikel
Sprache:eng
Schlagworte:
amorphous
density-of-states
DOS
Electron optics
IGZO
infrared light
Lighting
Logic gates
Optical pumping
Optical sensors
Oxide semiconductor
photodetector
Photonics
TFT
Thin film transistors
thin-film transistor
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Zusammenfassung:Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are investigated for a possible application to infrared (IR) photodetector through subgap density-ofstates over the forbidden bandgap. The origin of the sub-bandgap(hν
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2686844