High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

We report high performance, orientation-controlled, and locally back-gated black phosphorus (BP) n-MOSFETs and p-MOSFETs with titanium and permalloy contacts, respectively. Devices with channel length ranging from 0.3 to 0.7 μm are analyzed. Armchair-oriented BP p-MOSFETs (n-MOSFETs) display 3.5 tim...

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Veröffentlicht in:	IEEE electron device letters 2017-05, Vol.38 (5), p.685-688
Hauptverfasser:	Haratipour, Nazila, Namgung, Seon, Grassi, Roberto, Low, Tony, Sang-Hyun Oh, Koester, Steven J.
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials black phosphorus Contact resistance crystal orientation Crystals Logic gates MOSFET MOSFET circuits MOSFETs Phosphorus Transconductance
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