Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors

In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs) over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, the variable range hopping and the trap-limited ban...

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Veröffentlicht in:	IEEE electron device letters 2017-04, Vol.38 (4), p.473-476
Hauptverfasser:	Kim, Hee-Joong, Jeong, Chan-Yong, Bae, Sang-Dae, Lee, Jeong-Hwan, Kwon, Hyuck-In
Format:	Artikel
Sprache:	eng
Schlagworte:	acoustic phonon scattering charge transport mechanism Nickel P-type tin monoxide (SnO) realistic operating condition Scattering Temperature dependence Temperature distribution Temperature measurement Thin film transistors thin-film transistor
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