High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al 2 O 3 Passivation

High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al 2 O 3 Passivation

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Veröffentlicht in:IEEE electron device letters 2016-04, Vol.37 (4), p.452-455
Hauptverfasser: Liu, Che-Yu, Huang, Chia-Yen, Wu, Pei-Yu, Huang, Jhih-Kai, Kao, Tsung Sheng, Zhou, An-Je, Lin, Da-Wei, Wu, YewChung Sermon, Chang, Chun-Yen, Kuo, Hao-Chung
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container_title IEEE electron device letters
container_volume 37
creator Liu, Che-Yu
Huang, Chia-Yen
Wu, Pei-Yu
Huang, Jhih-Kai
Kao, Tsung Sheng
Zhou, An-Je
Lin, Da-Wei
Wu, YewChung Sermon
Chang, Chun-Yen
Kuo, Hao-Chung
description
doi_str_mv 10.1109/LED.2016.2532352
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title High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al 2 O 3 Passivation
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