High-Responsivity and High-Sensitivity Graphene Dots/a-IGZO Thin-Film Phototransistor

An a-IGZO thin-film phototransistor incorporating graphene absorption layer was proposed to enhance the responsivity and sensitivity simultaneously for photodetection from ultraviolet to visible regime. The spin-coated graphene dots absorb incident light, transferring electrons to the underlying a-I...

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Veröffentlicht in:IEEE electron device letters 2015-01, Vol.36 (1), p.44-46
Hauptverfasser: Pei, Zingway, Lai, Hsin-Cheng, Wang, Jian-Yu, Chiang, Wei-Hung, Chen, Chien-Hsun
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Sprache:eng
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Zusammenfassung:An a-IGZO thin-film phototransistor incorporating graphene absorption layer was proposed to enhance the responsivity and sensitivity simultaneously for photodetection from ultraviolet to visible regime. The spin-coated graphene dots absorb incident light, transferring electrons to the underlying a-IGZO to establish a photochannel. The 5 A/W responsivity and 1000 photo-to-dark current ratio were achieved for graphene phototransistor at 500 nm. As compared with 2700 transistor gain. The highest responsivity and photo-to-dark current ratio is 897 A/W and 10 6 , respectively, under 340-nm light illumination.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2368773