Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification
We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current...
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| Veröffentlicht in: | IEEE electron device letters 2014-04, Vol.35 (4), p.425-427 |
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| container_title | IEEE electron device letters |
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| creator | Sanz-Robinson, Josue Rieutort-Louis, Warren Yingzhe Hu Liechao Huang Verma, Naveen Wagner, Sigurd Sturm, James C. |
| description | We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8 V). A 0.01- mm 2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies , with a -3 dB point at 70 MHz. |
| doi_str_mv | 10.1109/LED.2014.2306940 |
| format | Article |
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All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8 V). A 0.01- mm 2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies , with a -3 dB point at 70 MHz.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2014.2306940</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>amorphous silicon (a-Si) ; Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Cutoff frequency ; Diodes ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Frequency conversion ; half-wave ; high frequency ; Materials science ; Nanocrystalline materials ; nanocrystalline silicon (nc-Si) ; Nanoscale materials and structures: fabrication and characterization ; P-i-n diodes ; Physics ; Power conversion ; power conversion efficiency ; rectifier ; Resistance ; Schottky diode ; Schottky diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon</subject><ispartof>IEEE electron device letters, 2014-04, Vol.35 (4), p.425-427</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-6d4114d4db5e9c7b0ea52bc887290b11fa88f73ec60a7570b68d9c7dc25720753</citedby><cites>FETCH-LOGICAL-c321t-6d4114d4db5e9c7b0ea52bc887290b11fa88f73ec60a7570b68d9c7dc25720753</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6758370$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6758370$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28496244$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sanz-Robinson, Josue</creatorcontrib><creatorcontrib>Rieutort-Louis, Warren</creatorcontrib><creatorcontrib>Yingzhe Hu</creatorcontrib><creatorcontrib>Liechao Huang</creatorcontrib><creatorcontrib>Verma, Naveen</creatorcontrib><creatorcontrib>Wagner, Sigurd</creatorcontrib><creatorcontrib>Sturm, James C.</creatorcontrib><title>Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8 V). A 0.01- mm 2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies , with a -3 dB point at 70 MHz.</description><subject>amorphous silicon (a-Si)</subject><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Cutoff frequency</subject><subject>Diodes</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency conversion</subject><subject>half-wave</subject><subject>high frequency</subject><subject>Materials science</subject><subject>Nanocrystalline materials</subject><subject>nanocrystalline silicon (nc-Si)</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>P-i-n diodes</subject><subject>Physics</subject><subject>Power conversion</subject><subject>power conversion efficiency</subject><subject>rectifier</subject><subject>Resistance</subject><subject>Schottky diode</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kD1PwzAQhi0EEqWwI7FEQoxpz9_OWPWDIlUgURiYIsdxqEsaFzsd8u9J1Yrphnve904PQvcYRhhDNl7NZyMCmI0IBZExuEADzLlKgQt6iQYgGU4pBnGNbmLcQk8yyQboa9kVwZXJZOfDfuMPcfyqG29CF1td166xydrVzvgmWZuNb9ufLpk5X9qYVD4kS_e9SRbB_h5sY7rk3ZrWVc7o1vnmFl1Vuo727jyH6HMx_5gu09Xb88t0skoNJbhNRckwZiUrC24zIwuwmpPCKCVJBgXGlVaqktQaAVpyCYVQZc-VhnBJQHI6RI-n3n3w_R-xzbf-EJr-ZI45ZFwonh0pOFEm-BiDrfJ9cDsduhxDfhSY9wLzo8D8LLCPPJ2LdTS6roJujIv_OaJYJghjPfdw4py19n8tJFdUAv0DOI15KQ</recordid><startdate>20140401</startdate><enddate>20140401</enddate><creator>Sanz-Robinson, Josue</creator><creator>Rieutort-Louis, Warren</creator><creator>Yingzhe Hu</creator><creator>Liechao Huang</creator><creator>Verma, Naveen</creator><creator>Wagner, Sigurd</creator><creator>Sturm, James C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140401</creationdate><title>Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification</title><author>Sanz-Robinson, Josue ; Rieutort-Louis, Warren ; Yingzhe Hu ; Liechao Huang ; Verma, Naveen ; Wagner, Sigurd ; Sturm, James C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-6d4114d4db5e9c7b0ea52bc887290b11fa88f73ec60a7570b68d9c7dc25720753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>amorphous silicon (a-Si)</topic><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Cutoff frequency</topic><topic>Diodes</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency conversion</topic><topic>half-wave</topic><topic>high frequency</topic><topic>Materials science</topic><topic>Nanocrystalline materials</topic><topic>nanocrystalline silicon (nc-Si)</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>P-i-n diodes</topic><topic>Physics</topic><topic>Power conversion</topic><topic>power conversion efficiency</topic><topic>rectifier</topic><topic>Resistance</topic><topic>Schottky diode</topic><topic>Schottky diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sanz-Robinson, Josue</creatorcontrib><creatorcontrib>Rieutort-Louis, Warren</creatorcontrib><creatorcontrib>Yingzhe Hu</creatorcontrib><creatorcontrib>Liechao Huang</creatorcontrib><creatorcontrib>Verma, Naveen</creatorcontrib><creatorcontrib>Wagner, Sigurd</creatorcontrib><creatorcontrib>Sturm, James C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sanz-Robinson, Josue</au><au>Rieutort-Louis, Warren</au><au>Yingzhe Hu</au><au>Liechao Huang</au><au>Verma, Naveen</au><au>Wagner, Sigurd</au><au>Sturm, James C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2014-04-01</date><risdate>2014</risdate><volume>35</volume><issue>4</issue><spage>425</spage><epage>427</epage><pages>425-427</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8 V). A 0.01- mm 2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies , with a -3 dB point at 70 MHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2014.2306940</doi><tpages>3</tpages></addata></record> |
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| subjects | amorphous silicon (a-Si) Applied sciences Cross-disciplinary physics: materials science rheology Cutoff frequency Diodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Frequency conversion half-wave high frequency Materials science Nanocrystalline materials nanocrystalline silicon (nc-Si) Nanoscale materials and structures: fabrication and characterization P-i-n diodes Physics Power conversion power conversion efficiency rectifier Resistance Schottky diode Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon |
| title | Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification |
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